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Transistors

Publication date: March 2003 SJC00078BED

2SB1320A

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SD1991A

■ Features

• High forward current transfer ratio h

• Allowing supply with the radial taping

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

−60 V

Collector-emitter voltage (Base open) V

CEO

−50 V

Emitter-base voltage (Collector open) V

EBO

−7V

Collector current I

−100 mA

Peak collector current I

−200 mA

Collector power dissipation P

400 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= −10 µA, I

= 0 −60 V

Collector-emitter voltage (Base open) V

CEO

= −2 mA, I

= 0 −50 V

Emitter-base voltage (Collector open) V

EBO

= −10 µA, I

= 0 −7V

Collector-base cutoff current (Emitter open)

CBO

= −20 V, I

= 0 −1 µA

Collector-emitter cutoff current (Base open)

CEO

= −20 V, I

= 0 −1 µA

Forward current transfer ratio

= −10 V, I

= −2 mA 160 460 

Collector-emitter saturation voltage V

CE(sat)

= −100 mA, I

= −10 mA −1V

Transition frequency f

= −10 V, I

= 1 mA, f = 200 MHz 80 MHz

Collector output capacitance C

= −10 V, I

= 0, f = 1 MHz 3.5 pF

(Common base, input open circuited)

■ Electrical Characteristics T

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

Rank Q R S No-rank

160 to 260 210 to 340 290 to 460 160 to 460

Product of no-rank is not classified and have no marking symbol for rank.

6.9

±0.1

2.5

±0.1

0.45

1.05

±0.05

2.5

±0.5

123

2.5

±0.5

+0.10

–0.05

0.45

+0.10

–0.05

(0.8)

(1.0)(0.85)

3.5

±0.1

14.5

±0.5

(0.7) (4.0)

0.65 max.

Unit: mm

1: Emitter

2: Collector

3: Base

MT-1-A1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3 4

2SB1320A 1

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Página 1 - 2SB1320A

Transistors1Publication date: March 2003 SJC00078BED2SB1320ASilicon PNP epitaxial planar typeFor general amplificationComplementary to 2SD1991A Featu

Página 2

2SB1320A2SJC00078BEDIB  VBEIC  VBEVCE(sat)  ICPC  TaIC  VCEIC  IBhFE  ICfT  IECob  VCB0 16040 120800100200300400500Collector power dissipatio

Página 3

2SB1320A3SJC00078BEDh Parameter  IEh Parameter  VCBICBO  TaCre  VCENF  IENF  IECollector-emitter voltage VCE (V)06543210 −30−5 −25−10 −20−15Re

Página 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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